Water-induced dual ultrahigh mobilities over 400 cm² V⁻¹ s⁻¹ in 2D MoS₂ transistors for ultralow-voltage operation and photoelectric synapse perception

Abstract

A facile and effective strategy to significantly enhance the field-effect mobility over 400 cm 2 V −1 s −1 is proposed by capping the water molecules on the 2D MoS 2 surface of transistors, which can be used to achieve some intriguing synapse behaviors.