This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to an improved curvature compensation method over a very wide temperature range. The proposed design was implemented in a standard 0.35 $\mu{\hbox{m}}$ CMOS process. The compensation is performed by using only poly-silicon resistors. This is achieved by using a second Op-amp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. The performance of the circuit was verified experimentally. Measured results have shown temperature coefficients as low as 3.9 ${\hbox{ppm/}}^{\circ}{\hbox{C}}$ over a temperature range of 165 $\,^{\circ}{\hbox{C}}$ ( ${-}{\hbox{15}}\,^{\circ}{\hbox{C}}$ to 150 $\,^{\circ}{\hbox{C}}$ ) and temperature coefficients as low as 13.7 ${\hbox{ppm/}}^{\circ}{\hbox{C}}$ over an extended temperature range of 200 $\,^{\circ}{\hbox{C}}$ ( $-\hbox{50}\,^{\circ}{\hbox{C}}$ to 150 $\,^{\circ}{\hbox{C}}$ ). In addition the circuit demonstrated very good line regulation performance for a broad range of supply voltages. The measured line regulation at room temperature is 0.039% V.

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