Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden–Popper Perovskite

Abstract

Nonvolatile optoelectronic memories based on organic-inorganic hybrid perovskites have appeared as powerful candidates for next-generation soft electronics. Here, ambipolar SnO transistor-based nonvolatile memories with multibit memory behavior (11 storage states, 120 nC state^-1) and ultralong retention time (>10⁵ s) are demonstrated for which an Al₂O₃/two-dimensional Ruddlesden-Popper perovskite (2D PVK) heterostructure dielectric architecture is employed. The unique storage features are attributed to suppressed gate leakage by Al₂O₃ layer and hopping-like ionic transport in 2D PVK with varying activation energy under different light intensities. The photoinduced field-effect mechanism enables top-gated transistor operation under illumination, which would not be achieved under dark. As a result, the device exhibits remarkable photoresponsive characteristics, including ultrahigh specific detectivity (2.7 × 10¹⁵ Jones) and broadband spectrum distinction capacity (375-1064 nm). This study offers valuable insight on the PVK-based dielectric engineering for information storage and paves the way toward multilevel broadband-response optoelectronic memories.