Monolayer MoS₂ Synaptic Transistors for High-Temperature Neuromorphic Applications

Abstract

As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS₂ as the channel and Na⁺-diffused SiO₂ as the ionic gate medium. A large on/off ratio of 10⁶ can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS₂ transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.