Concepedia

Publication | Closed Access

Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy

10

Citations

0

References

2009

Year

Yaqi Wang, Hui Xu, Siddharth Alur, An-Jen Cheng, Minseo Park, Sharukh Sakhawat, Okechukwu Akpa, Saritha Akavaram, K. Das

Unknown Venue

Abstract

Rise of junction temperature during operation can greatly affect performance and reliability of Light-emitting diodes (LED). Unfortunately, the junction temperature of the LED can not be measured directly. In this report, non-contact methods using Electro-luminescence (EL) and Micro-Raman spectroscopy were employed to estimate the junction temperature of GaN-based LED.