Science Advances · 2021 · 61 citations · 61 references
Natural SciencesMaterials SciencePhysicsAtomic PhysicsElectronic MaterialsMaterials PhysicsDefects In Electronic MaterialsFatigueFerroelectric MaterialsNanoelectronicsElectrical FatigueElectronic Structure Of DefectsFatigue ResistanceFerroelectric Tunnel JunctionsMechanical Fatigue ResistanceTunnel JunctionsTunneling BarriersTunneling Conduction
FTJs. These results reveal an atomic-scale fatigue mechanism of ultrathin ferroelectric barriers associated with the aggregation of charged defects, facilitating the design of reliable FTJs and ferroelectric nanoelectronic devices for practical applications.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
Natural Sciences, Chemistry, Physics +16
Memristive devices for computing
J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology · 2012 · 3.8K citations
Engineering, Computer Engineering, Electrical Engineering +11