1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T498,Abstract Ultraviolet photodetectors (UV PDs) with “5S” (high sensitivity, high signal‐to‐noise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize high‐performance UV PDs, heterojunctions are created to form a built‐in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice‐matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.1e:T52f,A self-powered, high-performance Ti₃ C₂ T_x MXene/GaN van der Waals heterojunction (vdWH)-based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti₃ C₂ T_x /GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self-powered mode, including a large responsivity (284 mA W^-1 ), a high specific detectivity (7.06 × 10¹³ Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy-processing spray-deposition route for the fabrication of large-area UV photodiode arrays that exhibit highly uniform cell-to-cell performance. The MXene/GaN photodiode arrays with high-efficiency and self-powered ability show high potential for many applications, such as energy-saving communication, imaging, and sensing networks.1f:T4a9,Self-powered photodetectors can work with low power consumption or even without any supply from external power sources, and they are recognized as one of the developing trends of next-generation optoelectronic devices. As one of the most-known n-type metal oxides applied in electronic devices, ZnO nanostructures and their heterostructures with other appropriate materials have been widely applied in the assembly of self-powered UV photodetectors. In this review, the recent research on different types of ZnO-based self-powered UV photodetectors is outlined. ZnO nanostructures with different dimensionalities adopted in these photodetectors are discussed in detail. The influences of specific effects, such as the piezo-phototronic effect, the pyro-phototronic effect, the photo-gating effect, and even their fusions, on modulating the self-powered photo-response of these photodetectors have also been demonstrated. The applications of these photodetectors in UV sensing, environm

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