2002 · 65 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersDoherty Power AmplifiersGainHeterojunction Bipolar TransistorsMatching ConditionsPower Added EfficiencyPower EfficiencyPower OutputRadio Frequency Power Amplifiers
An extension of the Doherty amplifier architecture which maintains high efficiency over a wide range of output power (>6 dB) is presented. This extended Doherty amplifier is demonstrated experimentally with InGaP-GaAs HBTs at a frequency of 950 MHz. P/sub 1 dB/ is measured at 27.5 dBm with PAE of 46%. PAE of at least 39% is maintained for over an output power range of 12 dB backed-off from P/sub 1 dB/. This is an improvement over the classical Doherty amplifier, where high efficiency is typically obtained up to 5-6 dB backed-off from P/sub 1 dB/. Generalized design equations for the Doherty amplifier are derived to show a careful choice of the output matching circuit and device scaling parameters can improve efficiencies at lower output power.
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RF power amplifiers for wireless communications
Steve Cripps · IEEE Microwave Magazine · 2000 · 2.3K citations
A New High Efficiency Power Amplifier for Modulated Waves
W.H. Doherty · Proceedings of the IRE · 1936 · 1.1K citations