80 GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

Abstract

We report distributed amplifiers with 80 GHz bandwidth, 6.7 dB gain and /spl sim/70 GHz bandwidth, 7.7 dB gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBTs have very high f/sub max/ (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product.