In-Plane Phonon Anisotropy and Anharmonicity in Exfoliated Natural Black Arsenic

Abstract

Group-VA two-dimensional layered materials in a puckered honeycomb structure exhibit strong in-plane anisotropy and have emerged as new platforms for novel devices. Here, we report on systematic Raman investigations on exfoliated b-As flakes on the A_g¹ and A_g² polarization dependence on their symmetry, excitation wavelength, and flake thickness. The intensity maximums of both phonons are corrected in the b-As armchair direction under 633 nm excitation regardless of the flake thickness upon considering optical birefringence effects and interference effects. The intensity ratio of A_g¹ to A_g² modes under 532 nm excitation is useful for b-As crystalline orientation identification. Temperature-dependent Raman investigations reveal the linearly anharmonic behaviors of both phonons in the range from 173 to 293 K and a slightly greater first-order temperature coefficient in the zigzag direction. Our findings give deep insight into the in-plane phonon anisotropy and anharmonicity of b-As and provide a step toward future device applications.