Two-dimensional ferroelasticity and ferroelastic strain controllable anisotropic transport properties in CuTe monolayer

Abstract

nearly semiconducting electronic structure, highly anisotropic electric conductivity and thermopower coefficient can be obtained along the two planar principal axes of the CuTe monolayer. To simulate the more realistic experimental scenarios, coherent formation of FE domain walls and domain-wall motion assisted FE switching have also been evaluated in CuTe multi-domain configurations. Based on the transverse thermoelectric effect inherent in anisotropic CuTe monolayers, the schematic model for obtaining the FE strain controllable electric current within CuTe multi-domain configurations has been proposed, which can be verified experimentally.