Ternary Transition Metal Chalcogenide Nb₂Pd₃Se₈: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors

Abstract

Abstract In this work, high‐quality 1D van der Waals (vdW) Nb 2 Pd 3 Se 8 is synthesized, showing an excellent scalability from bulk to single‐ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb 2 Pd 3 Se 8 is a semiconducting material, displaying indirect‐to‐direct bandgap transition with decreasing the number of unit‐ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb 2 Pd 3 Se 8 nanowires exhibit n‐type transport characteristics at room temperature, resulting in the values for the electron mobility and I on / I off ratio of 31 cm 2 V −1 s −1 and ≈ 10 4 , respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb 2 Pd 3 Se 8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top‐gated FETs fabricated with the Al 2 O 3 dielectric layer are studied simultaneously with back‐gated FETs.