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Nitrogen-Doped Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene Induced by Plasma Treatment with Enhanced Microwave Absorption Properties

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Citations

63

References

2021

Year

Abstract

Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> has microwave absorption (MA) properties due to its dielectric loss, but the absence of magnetic loss capability of pure Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> causes unmatched impedance and unsatisfied MA performance. Modification of Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> with magnetic particles is an effective way to introduce the magnetic loss mechanism. However, these modified Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> particles have higher density and require complicated fabrication processes, restricting the industrial production and functional applications. Here, a low-temperature and simple method of radio-frequency N<sub>2</sub> plasma treatment was adopted to modify Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> with N. More interestingly, the N-doped Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> flakes demonstrated magnetic properties and thus exhibited drastically enhanced MA properties. The minimum reflection loss (RL<sub>min</sub>) of -59.20 dB at 10.56 GHz was achieved in N-doped Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> products after only 3 min of plasma treatment, remarkably higher than RL<sub>min</sub> of -11.07 dB at 7.92 GHz for the pristine Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub>. The main mechanism is due to the combination of dielectric loss, magnetic loss, and the good impedance matching in the N-doped Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub>. Further prolonging the nitriding time induces much desorption of -F and the formation of TiO<sub>2</sub>, thus deteriorating the impedance matching and the MA properties.

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