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Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

Materials ScienceElectrical EngineeringSynaptic PlasticityEngineeringNanoelectronicsSynaptic TransmissionArtificial SynapseApplied PhysicsMedicineMemory DeviceNeuromorphic CharacteristicsNeuromorphic EngineeringMicroelectronicsForming-free Pt/al2o3/hfo2/hfalox/tin MemristorNeurochipPhase Change Memory