Publication | Closed Access

Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

Materials ScienceFerroelasticsEngineeringFerroelectric ApplicationOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsLow Thermal BudgetPyroelectricityAtomic LayerLarge Remnant Polarization