Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Abstract

In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as <inline-formula><tex-math notation="LaTeX">$ \text{3}\times \text{2}\;\mu \text{m}^2$</tex-math></inline-formula> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 <inline-formula><tex-math notation="LaTeX">$\Omega$</tex-math></inline-formula> and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.