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Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape

Incident Light AbsorptionElectrical EngineeringSolid-state LightingEngineeringPhotoluminescenceApplied PhysicsNew Lighting TechnologyAluminum Gallium NitrideGan Power DeviceLight-emitting DiodesGan-related Micro LightOptoelectronicsCarrier Escape