Ta₂Ni₃Se₈: 1D van der Waals Material with Ambipolar Behavior

Abstract

Abstract In this study, high‐purity and centimeter‐scale bulk Ta 2 Ni 3 Se 8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta 2 Ni 3 Se 8 crystals could be effectively exfoliated into a few chain‐scale nanowires through simple mechanical exfoliation and liquid‐phase exfoliation. Also, the calculation of electronic band structures confirms that Ta 2 Ni 3 Se 8 is a semiconducting material with a small bandgap. A field‐effect transistor is successfully fabricated on the mechanically exfoliated Ta 2 Ni 3 Se 8 nanowires. Transport measurements at room temperature reveal that Ta 2 Ni 3 Se 8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm 2 V −1 s −1 for electrons and holes, respectively. The temperature‐dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta 2 Ni 3 Se 8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.