Thickness effect on the ferroelectric properties of La-doped HfO₂ epitaxial films down to 4.5 nm

Abstract

Epitaxial La:HfO 2 films of less than 7 nm have a high remanent polarization of about 30 μC cm −2 , and show slight wake-up, endurance of at least 10 10 cycles and retention of more than 10 years, with both latter properties measured at the same poling voltage.