RSC Advances · 2021 · 10 citations · 41 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsMaterials PhysicsDefects In Electronic MaterialsSemiconductor NanomaterialsSemiconductor SurfacesSurface PhysicsTwo-dimensional NanomaterialsTwo-dimensional SemiconductorsDefect Evolution Under IrradiationDirect Band GapTransition Metal DichalcogenidesTwo-dimensional MaterialsVan Der Waals Heterostructures
Kelvin probe force microscopy. Due to different environments, molecular collisions lead to an increase in the concentration of vacancy defects, which made our results different from those previously reported. The first principles calculation suggests that an increase in the selenium vacancy population is generally accompanied by a transition from a direct gap material to an indirect one. This opens up a new venue to engineer the optical, frictional and electronic properties of transition metal dichalcogenides using irradiation.
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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
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Photoluminescence from Chemically Exfoliated MoS<sub>2</sub>
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Tightly bound trions in monolayer MoS2
Kin Fai Mak, Keliang He, Changgu Lee et al. · Nature Materials · 2012 · 2.8K citations · Full text