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Gate induced charge transfer and hysteresis enlargement in MoS<sub>2</sub>/GeSe<sub>2</sub> vertical heterostructures
10
Citations
33
References
2021
Year
Oxide HeterostructuresSemiconductor TechnologyHysteresis EnlargementEngineeringCharge TransferPhysicsOxide SemiconductorsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsCharge Transfer ProcessMultilayer HeterostructuresCharge Carrier TransportSemiconductor DeviceNanophysics
We explored the hysteresis enlargement in the vertical MoS<sub>2</sub>/GeSe<sub>2</sub> van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS<sub>2</sub> and GeSe<sub>2</sub> layers.
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