Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS₂ van der Waals Heterodevices

Abstract

We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS₂ van der Waals heterodevices. We contact monolayers of MoS₂ in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS₂ by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS₂ and switch on and off similar to the neutral exciton in MoS₂ for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS₂ heterostacks.