Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications - Concepedia

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Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

38

Citations

55

References

2021

Year

Umbreen Rasheed, Hojeong Ryu, Chandreswar Mahata, R.M. Arif Khalil, Muhammad Imran, Anwar Manzoor Rana, Farhana Kousar, Boram Kim, Yoon Kim, Seongjae Cho,

Journal of Alloys and Compounds

Materials ScienceElectrical EngineeringEngineeringNanotechnologyNanoelectronicsApplied PhysicsNeurocomputersNeuromorphic ApplicationsNeuromorphic DevicesNeuromorphic EngineeringResistive Switching CharacteristicsBrain-like ComputingPhase Change MemoryNeurochipTheoretical Simulation

References

	Year	Citations

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