High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2nm/0.6nm

Abstract

We demonstrate a 2-levels-stacked multi-bridge-channels (MBC) FET with channel thickness only 0.6nm and 1.2nm which is the thinnest channel record among reported MBC FET. The normalized drive current of a single stacked channel is 13.2μA·μm/μm (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> =1V) which is comparable to the latest 7-levels-stacked Si MBC FET. What's more, this ultrathin MBC FET demonstrates a very low leakage current per level (0.92pA·μm/μm, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> =1V), only 6.5% of the value of the Si MBC FET. We also explore a self-aligned edge-contact process, paving the way toward higher-levels-stacked ultrathin MBC FET.