Handy Protocol of Nitrogen-Doped BiVO₄ Photoanode for Visible Light-Driven Water Oxidation

Abstract

A rigidly adhered nitrogen-doped BiVO4 photoanode with a narrow band gap energy (Eg = 2.35 eV) for water oxidation was developed to attain the IPCE value of 35.1% at 440 nm which is among the highest reported values. This electrode provides a very stable photocurrent density of 3.3 mA cm–2 at 1.23 V vs RHE for a long term (at least 13.4 h) under visible light irradiation (100 mW cm–2).