Nature Communications · 2021 · 421 citations · 45 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMagnetic MaterialsQuantum MechanicsAntiferromagnetic MaterialsMagnetic Properties Of SolidsSpin DynamicsSpintronic MaterialsSpintronicsSymmetry BreakingAntiferromagnetic ControlAntiferromagnetic OxidesAntiferromagnetic SpintronicsCrystal Lattice SymmetryNoncollinear AntiferromagnetismNonvolatile MemorySpin Current MechanismValleytronics
Abstract We propose a new type of spin-valley locking (SVL), named C- paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C- paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C -paired SVL in monolayer V 2 Se 2 O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.
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