Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - Concepedia

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Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

22

Citations

28

References

2021

Year

Ding-kun Shi, Ying Wang, Xue Wu, Zhao-yang Yang, Xingji Li, Jianqun Yang, Fei Cao

Solid-State Electronics

Electrical EngineeringEngineeringApplied PhysicsBarrier InhomogeneityAl2o3 Interface Layer4H-sic Schottky DiodesMicroelectronicsCarbideSemiconductor Device

References

	Year	Citations

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