A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance - Concepedia

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A SiGe-Source Doping-Less Double-Gate Tunnel FET: Design and Analysis Based on Charge Plasma Technique with Enhanced Performance

36

Citations

25

References

2021

Year

Varun Mishra, Yogesh Kumar Verma, Santosh Kumar Gupta, Vikas Rathi

Electrical EngineeringEngineeringTunneling MicroscopyEnhanced PerformanceNanoelectronicsElectronic EngineeringApplied PhysicsCharge Plasma TechniqueMicroelectronicsSemiconductor Device

References

	Year	Citations

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