Design and Optimization of SiC MOSFET Wire Bondless Power Modules

Abstract

The electrical and thermal parameters of the package are key factors in achieving superior performance of silicon carbide (SiC) devices. To optimize the characteristics of a SiC power module, evaluating the electro-thermal design is an essential step before fabrication. However, due to the complex interactions of the semiconductor devices, package parameters, and system, it is a challenge to evaluate the output performance considering the electro-thermal characteristics of various components. In this paper, an integrated electro-thermal design and optimization method is proposed. The relationship between the package layout and the electro-thermal performance was evaluated with a 1200 V, 200 A half-bridge wire bondless SiC MOSFET power module. The effectiveness of the proposed method was verified at the system and circuit level. Thus, an advanced wire bondless power module with collaborative optimized electrical and thermal performance has been designed.