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T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation

Wide-bandgap SemiconductorElectrical EngineeringEngineeringEffective Recess EngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceEnhancement Mode OperationCategoryiii-v SemiconductorT-gate Algan/gan Hemt