Dual Passivation of Perovskite and SnO₂ for High‐Efficiency MAPbI₃ Perovskite Solar Cells

Abstract

So far, most techniques for modifying perovskite solar cells (PSCs) focus on either the perovskite or electron transport layer (ETL). For the sake of comprehensively improving device performance, a dual-functional method of simultaneously passivating trap defects in both the perovskite and ETL films is proposed that utilizes guidable transfer of Eu³⁺ in SnO₂ to perovskite. Europium ions are distributed throughout the SnO₂ film during the formation process of SnO₂, and they can diffuse directionally through the SnO₂/perovskite interface into the perovskite, while most of the europium ions remain at the interface. Under the synergistic effect of distributed Eu³⁺ in the SnO₂ and aggregated Eu³⁺ at the interface, the electron mobilities of ETLs are evidently improved. Meanwhile, diffused Eu³⁺ ions passivate the perovskite to reduce trap densities at the grain boundaries, which can dramatically elevate the open-circuit voltage (<i>V</i> _oc) of PSCs. Finally, the mainly PSCs coated on SnO₂:Eu³⁺ ETL achieve a power conversion efficiency of 20.14%. Moreover, an unsealed device degrades by only 13% after exposure to ambient atmosphere for 84 days.