Structure and Photoluminescence Properties of Thermally Synthesized V2O5 and Al-Doped V2O5 Nanostructures

Abstract

Al-free and Al-doped V₂O₅ nanostructures were synthesized by a thermal-chemical vapor deposition (CVD) process on Si(100) at 850 °C under 1.2 × 10^-1 Torr via a vapor-solid (V-S) mechanism. X-ray diffraction (XRD), Raman, and high-resolution transmission electron microscopy (HRTEM) confirmed a typical orthorhombic V₂O₅ with the growth direction along [110]-direction of both nanostructures. Metallic Al, rather than Al³⁺-ion, was detected by X-ray photoelectron spectroscopy (XPS), affected the V₂O₅ crystallinity. The photoluminescence intensity of V₂O₅ nanostructure at 1.77 and 1.94 eV decreased with the increasing Al-dopant by about 61.6% and 59.9%, attributing to the metallic Al intercalated between the V₂O₅-layers and/or filled in the oxygen vacancies, which behaved as electron sinks. Thus the Al-doped V₂O₅ nanostructure shows the potential applications in smart windows and the electrodic material in a Li-ion battery.