Postpassivation of Cs_0.05(FA_0.83MA_0.17)_0.95Pb(I_0.83Br_0.17)₃ Perovskite Films with Tris(pentafluorophenyl)borane

Abstract

Passivating defects to suppress recombination is a valid tactic to improve the performance of third-generation perovskite-based solar cells. Pb⁰ is the primary defect in Pb-based perovskites. Here, tris(pentafluorophenyl)borane is inserted between the perovskite and spiro-OMeTAD layer in SnO₂-based planar perovskite solar cells. The incorporation of tris(pentafluorophenyl)borane can effectively passivate Pb⁰ defects, decreasing recombination at the surface of the perovskite film. Additionally, the modification with tris(pentafluorophenyl)borane decreases the grain boundaries quantity in the perovskite film, enhancing the transportation capability of carriers. The resulting perovskite solar cell gets a high efficiency of 21.42%. While the reference device without tris(pentafluorophenyl)borane treatment acquires an efficiency of 19.07%. More importantly, the stability tests manifest that incorporating tris(pentafluorophenyl)borane in perovskite solar cells is conducive to the stability of the device.