Publication | Closed Access
Hafnium based high-k dielectric gate-stacked (GS) gate material engineered (GME) junctionless nanotube MOSFET for digital applications
15
Citations
37
References
2021
Year
Materials ScienceElectrical EngineeringEngineeringJunctionless Nanotube MosfetDigital ApplicationsNanoelectronicsNanotechnologyApplied PhysicsMicroelectronics
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