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ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices

Materials ScienceEngineeringOxide ElectronicsOxygen Vacancy EffectsApplied PhysicsThermoelectric MaterialAb Initio StudyMemory DevicesSemiconductor MemoryPhase Change Memory