Publication | Closed Access

Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringGan NanostructuresApplied PhysicsLaser ApplicationsPhotodetector ApplicationsGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorOptoelectronics