Inkjet Printed Circuits with 2D Semiconductor Inks for High‐Performance Electronics

Abstract

Abstract Air‐stable semiconducting inks suitable for complementary logic are key to create low‐power printed integrated circuits (ICs). High‐performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low‐cost printed digital electronics. Here, the authors demonstrate air‐stable, low voltage (<5 V) operation of inkjet‐printed n‐type molybdenum disulfide (MoS 2 ), and p‐type indacenodithiophene‐ co ‐benzothiadiazole (IDT‐BT) field‐effect transistors (FETs), estimating an average switching time of τ MoS2 ≈ 4.1 μs for the MoS 2 FETs. They achieve this by engineering high‐quality MoS 2 and air‐stable IDT‐BT inks suitable for inkjet‐printing complementary pairs of n‐type MoS 2 and p‐type IDT‐BT FETs. They then integrate MoS 2 and IDT‐BT FETs to realize inkjet‐printed complementary logic inverters with a voltage gain | A v | ≈ 4 when in resistive load configuration and | A v | ≈ 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long‐term stable, low‐cost printed digital ICs.