A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation

Abstract

In this work, we developed a comprehensive model for ferroelectric FET (FeFET), which can capture all the essential ferroelectric behaviors. Unlike previous models, which can describe only a subset but not all the reported ferroelectric behaviors, the proposed model can: i) predict device performance with geometry scaling; ii) quantify the device-to-device variation with device scaling; iii) exhibit stochasticity during a single domain switching; and iv) capture the accumulation of domain switching probability with applied pulse trains. This comprehensive model would enable researchers to explore a wide range of FeFET applications and guide device development, optimization and benchmarking.