Interface improvement of epitaxial 4H-SiC based Schottky didoes by selective heavy ion irradiation - Concepedia

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Interface improvement of epitaxial 4H-SiC based Schottky didoes by selective heavy ion irradiation

22

Citations

31

References

2020

Year

Vibhor Kumar, Sandeep Kumar, A.S. Maan, Jamil Akhtar

Applied Nanoscience

Materials ScienceElectrical EngineeringIon ImplantationEngineeringApplied PhysicsSemiconductor Device FabricationSchottky DidoesInterface ImprovementCarbide

References

	Year	Citations

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