Publication | Open Access
NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator
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2016
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EngineeringNicl3 MonolayerTopological Quantum StateSpintronic MaterialSemiconductorsMagnetismSuperconductivityQuantum MaterialsMagnetic Topological InsulatorMonolayer CharacteristicsMaterials ScienceSpin-charge-orbit ConversionPhysicsHigh MobilityQuantum MagnetismSpintronicsNatural SciencesTopological InsulatorCondensed Matter PhysicsApplied Physics
The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility. The Nickle chloride (NiCl3) monolayer characteristics are investigated herein using first-principles calculations. It is reported that NiCl3 monolayers constitute a new class of Dirac materials with Dirac spin-gapless semiconducting and high-temperature ferromagnetism (~400K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic insulator with a large non-trivial band gap of ~24 meV, corresponding to an operating temperature as high as ~280K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer lead us to propose that this material give a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermion of about 4x105 m/s indicate very high mobility in NiCl3 monolayers.