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Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction

Materials ScienceEngineeringDislocation InteractionX-ray DiffractionApplied PhysicsCondensed Matter PhysicsAluminum Gallium NitrideGan Power DeviceMultilayer HeterostructuresHeteroepitaxial Gan LayersLattice Mismatch