Compact I-V Model for Ambipolar Field-Effect Transistors With 2D Transition Metal Dichalcogenide as Semiconductor

Abstract

In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.