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Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices

Materials ScienceIi-vi SemiconductorElectrical EngineeringElectronic DevicesEngineeringOptical PropertiesTb-mbj PotentialOxide ElectronicsApplied PhysicsSemiconductor MaterialTransition MetalPhase Change MemoryOptoelectronics