ACS Applied Nano Materials · 2020 · 52 citations · 31 references
The heterogeneous integration of micro‑ and nanoscale devices with on‑chip circuits and waveguide platforms is a key enabling technology, and while single‑device pick‑and‑place has achieved nanoscale accuracy, scaling to multielement systems requires automation that preserves this precision. The study aims to develop an automated transfer‑printing process that maintains nanoscale positional accuracy for scalable, high‑throughput integration of micro‑ and nanoscale devices. The authors implement an automated transfer‑printing workflow that employs a standard optical microscope, computer‑vision‑based alignment, and a high‑accuracy translational stage. The system achieves sub‑40‑nm average positional error (3σ < 390 nm) for serial transfer of silicon membranes and nanowires, sub‑30‑nm error (3σ < 705 nm) for parallel transfer over a 2 × 2 mm² area, rotational accuracy better than 45 mrad, and accurate placement from both lithographically defined and random positions, demonstrating feasibility for scalable heterogeneous integration.
The heterogeneous integration of micro- and nanoscale devices with on-chip circuits and waveguide platforms is a key enabling technology, with wide-ranging applications in areas including telecommunications, quantum information processing, and sensing. Pick and place integration with absolute positional accuracy at the nanoscale has been previously demonstrated for single proof-of-principle devices. However, to enable scaling of this technology for realization of multielement systems or high throughput manufacturing, the integration process must be compatible with automation while retaining nanoscale accuracy. In this work, an automated transfer printing process is realized by using a simple optical microscope, computer vision, and high accuracy translational stage system. Automatic alignment using a cross-correlation image processing method demonstrates absolute positional accuracy of transfer with an average offset of <40 nm (3σ < 390 nm) for serial device integration of both thin film silicon membranes and single nanowire devices. Parallel transfer of devices across a 2 × 2 mm2 area is demonstrated with an average offset of <30 nm (3σ < 705 nm). Rotational accuracy better than 45 mrad is achieved for all device variants. Devices can be selected and placed with high accuracy on a target substrate, both from lithographically defined positions on their native substrate or from a randomly distributed population. These demonstrations pave the way for future scalable manufacturing of heterogeneously integrated chip systems.
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