Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Abstract

Low-symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low-symmetry narrow-bandgap 2D materials will be rewarding for the development of nanoelectronics and nano-optoelectronics. Herein, sulfide niobium (NbS₃ ), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS₃ with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS₃ Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10^-25 A² Hz^-1 ), photoelectrical dichroic ratio (1.84) and high-quality reflective polarization imaging (637 nm and 830 nm). A room-temperature specific detectivity exceeding 10⁷ Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low-symmetry narrow-bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid-infrared optoelectronic applications.