In Situ Oxygen Doping of Monolayer MoS₂ for Novel Electronics

Abstract

In 2D semiconductors, doping offers an effective approach to modulate their optical and electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum disulfide (MoS₂ ) is reported during the chemical vapor deposition process. Oxygen concentrations up to 20-25% can be reliable achieved in these doped monolayers, MoS_2- _x O_x . These oxygen dopants are in a form of substitution of sulfur atoms in the MoS₂ lattice and can reduce the bandgap of intrinsic MoS₂ without introducing in-gap states as confirmed by photoluminescence spectroscopy and scanning tunneling spectroscopy. Field effect transistors made of monolayer MoS_2- _x O_x show enhanced electrical performances, such as high field-effect mobility (≈100 cm² V^-1 s^-1 ) and inverter gain, ultrahigh devices' on/off ratio (>10⁹ ) and small subthreshold swing value (≈80 mV dec^-1 ). This in situ oxygen doping technique holds great promise on developing advanced electronics based on 2D semiconductors.