Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS₃/Fe₃GeTe₂ Stacking Heterostructure

Abstract

The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS₃/Fe₃GeTe₂ when the temperature is below the Neel temperature of MnPS₃. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS₃/Fe₃GeTe₂ heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe₃GeTe₂ during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.