Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu₂Se Composites

Abstract

The applications of mixed ionic-electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu₂ Se is stabilized through regulating the behaviors of Cu⁺ ions and electrons in a Schottky heterojunction between the Cu₂ Se host matrix and in-situ-formed BiCuSeO nanoparticles. The accumulation of Cu⁺ ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space-charge distribution in the electric double layer, which blocks the long-range migration of Cu⁺ and produces a drastic reduction of Cu⁺ ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu₂ Se, obstructing the reduction reaction of Cu⁺ into Cu metal at the interface and hence stabilizes the β-Cu₂ Se phase. Furthermore, incorporation of BiCuSeO in Cu₂ Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈2.7 at 973 K and high average ZT value of ≈1.5 between 400 and 973 K for the Cu₂ Se/BiCuSeO composites. This discovery provides a new avenue for stabilizing mixed ionic-electronic conduction thermoelectrics, and gives fresh insights into controlling ion migration in these ionic-transport-dominated materials.