Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In₂O₃/AlLiO Thin-Film Transistor

Abstract

Light-stimulated artificial synapse shows broad application prospects in the field of neuromorphic computing. Implementation of an all-inorganic solid oxide phototransistor will be compatible with future development by providing devices with good stability and large-scale production requirements. Here, an all-inorganic light-stimulated In2O3/AlLiO thin film transistor is fabricated by a fully aqueous solution, whose threshold voltage and subthreshold swing are about 0.47 V and 0.25 V/decade, respectively. The devices can respond to optical signals and successfully simulate some important synaptic characteristics, including the transition from short-term memory to long-term memory. Under the condition of different light intensities, Pavlov’s experiment is simulated to study the behavior of brain-like associative learning. In addition, this work emulates the behavior of photonic potentiation and electric depression, which can realize the erasure of optical information storage through electrical signals and maintain good erasable repeatability. More significantly, a simple fabrication of an In2O3/AlLiO all-inorganic synapse transistor can provide an effective strategy for the artificial synapses driven by optical signals.