Publication | Closed Access
Optoelectronic In‐Ga‐Zn‐O Memtransistors for Artificial Vision System
94
Citations
52
References
2020
Year
Photoelectric SensorElectronic DevicesOptical MaterialsSemiconductor InterfacesOphthalmologyNeuroengineeringArtificial Retinal ArrayEngineeringOptoelectronic MaterialsBioelectronicsVision SensorArtificial Vision SystemOptoelectronic DevicesBiomedical EngineeringAl 2Optoelectronics
An artificial vision system that simulates human eye functions is needed for biological robots. The study proposes In‑Ga‑Zn‑O memtransistors with an Al₂O₃/ion‑gel gate dielectric and an artificial vision system using a retinal array and neural network. Positive charge trapping in the Al₂O₃ layer, driven by gate voltage, reduces the subthreshold swing to 26.4 mV/dec and, together with the ion‑gel field, captures photogenerated charges at the In‑Ga‑Zn‑O channel interface, enabling optoelectronic memristive behavior. The devices exhibit persistent photoconductivity, and using the artificial retinal array improves image recognition accuracy and efficiency, demonstrating a new strategy for artificial vision systems.
Abstract An artificial vision system that can simulate the visual functions of human eyes is required for biological robots. Here, In‐Ga‐Zn‐O memtransistors using a naturally oxidized Al 2 O 3 and an ion gel as a common gate stacking dielectric is proposed. Positive charge trapping in the Al 2 O 3 layer can be induced by modulating the gate voltage, which causes the back sweep subthreshold swing (SS) of the device to break the physical limit (≥60 mV per decade at room temperature), and the minimum SS is as low as 26.4 mV per decade. In addition, photogenerated charges in the device are captured at the In‐Ga‐Zn‐O channel/ion gel interface due to the superposition of the additional electric field generated by positive charges trapped in the Al 2 O 3 layer and the external gate electric field. Thus, persistent photoconductivity is observed in the In‐Ga‐Zn‐O memtransistors. Finally, by employing the optoelectronic memristive functions of In‐Ga‐Zn‐O memtransistors, an artificial vision system based on artificial retinal array (ARA) and artificial neural network is proposed. An obvious improvement in the recognition rate and efficiency with the use of ARA for the image preprocessing is achieved. This study provides a new strategy for the realization of artificial vision systems.
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